| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a layout to reduce noise riding on wiring inside a transfer gate. <P>SOLUTION: There are provided memory cell arrays MS0, MS1, sense amplifiers S0-S3, transfer gates TGR0-TGR3 and TGL0-TGL3 disposed on both sides of the sense amplifiers, bit lines BL0T-BL3T connected from the memory cell arrays to the transfer gates, and wiring P0T-P3T and P0N-P3N inside the transfer gates connected from the transfer gates to the sense amplifiers. Wiring that becomes a noise source is disposed on a first wiring track, and the bit lines are disposed on second, third, fourth, fifth and sixth wiring tracks. Furthermore, wiring inside the transfer gates is disposed on each of the third and the fifth wiring tracks, thereby preventing coupling from the wiring of the noise source and the coupling of the wirings inside the transfer gates. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
