| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a film for forming a dielectric film with an ABOx type crystal structure capable of forming a dielectric film having a reduced dielectric loss and satisfactory insulation properties. <P>SOLUTION: The composition for forming a film comprises: a reaction product between (A) a first metal compound as a metal hydroxide containing at least one kind of metal atom selected from Ba, Sr and Ca and (B) a second metal compound as at least one kind of metal alkoxide selected from Ti, Zr and Hf and/or the partially hydrolyzed condensate thereof; and (C) an organic solvent, and the molar ratio between the metal atoms of the first metal compound and the metal atoms of the second metal compound is 0.9 to 1.1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
