| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which ensures sufficient light output with Zn dispersion within a short period of time and small vertical spreading angle, and also to provide a semiconductor laser device. SOLUTION: The semiconductor laser element comprises a first conductivity type first clad layer 12, a first conductivity type first optical guide layer 13, an MQW active layer 14 formed by laminating a plurality of barrier layers and well layers, a second conductivity type second optical guide layer 15, and a second conductivity type second clad layer 19 which are sequentially formed on the main surface of a substrate 11. Moreover, a first window layer 22 and a second window layer 23 are provided at the area near a first end surface 20 and a second end surface 21 which are provided opposed with each other. At least the second optical guide layer 15 is formed in the thickness of 2nm or more but 6nm or less or Al composition ratio of 0.55 or more but under 0.7. COPYRIGHT: (C)2005,JPO&NCIPI
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