SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To stably manufacture a thin IGBT having good electrical characteristics. SOLUTION: The IGBT has a p+-type high-concentration drain layer 12 which decides the injection volume of a hole and a p--type low-concentration drain layer 11 which absorbs the fluctuation of the ground amount of the rear surface of a wafer under an n+-type buffer layer 13. Since ohmic junction is formed by means of a drain electrode 31 containing aluminum with the p--type drain layer 11 after the rear surface of the wafer is ground, ion implantation and heat treatment performed for separately forming a high-concentration layer for drain contact become unnecessary. COPYRIGHT: (C)2005,JPO&NCIPI