发明名称 |
Programmable MOS device formed by hot carrier effect |
摘要 |
A programmable metal-oxide-semiconductor (MOS) memory circuit and the method for programming same and disclosed. The circuit comprises a first N-type transistor having a gate region tied with a drain region and connectable to a first control voltage level, and a source region connected to a second voltage level; and a second N-type transistor having a gate region tied with a drain region and connectable to the first control voltage level, and a source region connected to the second voltage level, wherein the first and second control voltage levels are imposed to program either the first or second N-type transistor by causing a voltage difference between the drain region and the source region (Vds) and voltage difference between the gate region and the source region (Vgs) to be bigger than a predetermined threshold voltage to induce a hot carrier effect.
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申请公布号 |
US2005207211(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20040803785 |
申请日期 |
2004.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHUNG-HUI |
分类号 |
G11C11/00;G11C11/401;G11C11/4063;G11C16/12;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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