| 摘要 |
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (C<SUB>FE</SUB>) from hydrogen diffusion in semiconductor devices ( 102 ), wherein nitrided aluminum oxide (N-AlOx) is formed over a ferroelectric capacitor (C<SUB>FE</SUB>), and one or more silicon nitride layers ( 112, 117 ) are formed over the nitrided aluminum oxide (N-AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N-AlOx) is formed over the ferroelectric capacitors (C<SUB>FE</SUB>), with two or more silicon nitride layers ( 112, 117 ) formed over the aluminum oxide (AlOx, N-AlOx), wherein the second silicon nitride layer ( 112 ) comprises a low silicon-hydrogen SiN material.
|
