| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for determining process alignment when a phase shift region is formed in the manufacture of a phase shift mask to be used for the manufacture of a semiconductor device, and to provide a method for determining photoresist pattern alignment when a phase shift region is formed in the manufacture of a phase shift mask. <P>SOLUTION: In the step of forming a non-circuitry phase shift alignment region is formed in the manufacture of a phase shift mask, alignment accuracy is measured at least partially by using an aerial image measurement equipment so as to determine the alignment of patterns to be formed in a photoresist applied a substrate before the material is etched to form the non-circuitry phase shift alignment region and while the photoresist is present on the substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
