| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a manufacturing process of a semiconductor device based on a determined dimension by including a workpiece dimension measuring process for nondestructively determining the transverse dimension of a pattern formed on a wafer in no contact at high speed by means of ellipsometry. <P>SOLUTION: A polarized state parameter is determined for a calibration pattern with a confirmed dimension formed on the wafer to form a database. The database is retrieved on the basis of the polarization parameter of a measuring sample to determine the dimension thereof. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
