发明名称 SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS
摘要 PROBLEM TO BE SOLVED: To realize low IR while controlling the forward voltage VF of a Schottky barrier diode, to control loss in the forward direction while reducing loss in the reverse direction, and to reduce power consumption. SOLUTION: When a Schottky barrier diode is composed of a Schottky metal layer 6 where a trace of Al is added to Ti, for example, low IR can be realized without increasing the forward voltage VF of pure Ti sharply. Consequently loss in the forward direction can be controlled while reducing loss in the reverse direction, and power consumption can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259798(A) 申请公布日期 2005.09.22
申请号 JP20040065980 申请日期 2004.03.09
申请人 SANYO ELECTRIC CO LTD 发明人 TAKAYAMA MAKOTO
分类号 H01L29/872;H01L21/329;H01L29/47;H01L29/76;(IPC1-7):H01L29/47 主分类号 H01L29/872
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