MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an interconnection structure of an integrated circuit having a dielectric layer with a low dielectric constant and capable of suppressing a deterioration of a mechanical strength and of improving a thermal diffusion. SOLUTION: The present invention relates to a manufacturing method of a semiconductor device. This method comprises the steps of forming a plurality of conductive members (54) separated by gaps (60), forming a first dielectric layer (58) in an upper part of the plurality of conductive members thus separated by a spin-on process, thereby forming at least one air region (60) by bridging at least one gap by the first dielectric layer. At least one air region has about 1.0 dielectric constant and an isolation between at least two separated conductive members out of the plurality of conductive members is improved and the first dielectric layer is selected from polyphenyl quinoxaline and polyimide which is previously imidized. COPYRIGHT: (C)2005,JPO&NCIPI