发明名称 THIN FILM DEPOSITION APPARATUS AND THIN FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus capable of performing film deposition by generating stable plasma at high efficiency. SOLUTION: A sputtering apparatus 1 as a thin film deposition apparatus comprises a vacuum container 11 to maintain the inside in a vacuum state, and a plasma generating means 80 connected to the vacuum container 11 to generate plasma in the vacuum container 11. The plasma generating means 80 comprises a dielectric plate 83 formed of a dielectric material, antennas 85a, 85b installed adjacent to the dielectric plate 83, a case body 81 which forms an antenna storage chamber 80A to store the antennas 85a, 85b together with the dielectric plate 83, a pipe 15a to exhaust the antenna storage chamber 80A in a vacuum state, and a vacuum pump 15. The inside of the vacuum container 11 and the antenna storage chamber 80A are partitioned by the dielectric plate 83 to form an independent space. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005256024(A) 申请公布日期 2005.09.22
申请号 JP20040065763 申请日期 2004.03.09
申请人 SHINCRON:KK 发明人 SO MATASHIYU;SAKURAI TAKESHI;CHIBA KOKI;KYO YUSHO;AMANO NAOJI
分类号 C23C14/34;C23C14/58;H01L21/205;H01L21/285;H01L21/31;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址
您可能感兴趣的专利