发明名称 Method for variability constraints in design of integrated circuits especially digital circuits which includes timing closure upon placement and routing of digital circuit or network
摘要 In a standard cell, dummy transistors have p-type and n-type dummy gate electrodes. The dummy transistors are in an OFF state all the time. The gate length of each of the dummy gate electrodes is extended over an end portion of a diffusion region toward the inside of the standard cell. Thus, the total surface area and the total perimeter of respective gate electrodes of all transistors provided in the standard cell are increased. As a result, for example, even though shapes of gate electrodes of transistors vary between the standard cell and each of other standard cells, transistor characteristics are substantially equal among the standard cells. Therefore, variations in delays of signals generated between the standard cells can be suppressed.
申请公布号 US2005205894(A1) 申请公布日期 2005.09.22
申请号 US20050080456 申请日期 2005.03.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SUMIKAWA TAKASHI;YAMASHITA KYOJI;MOTOJIMA DAI
分类号 H01L21/822;H01L21/82;H01L27/02;H01L27/04;H01L27/10;H01L27/118;(IPC1-7):H01L21/82 主分类号 H01L21/822
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