SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in electric contact characteristics between a silicide layer and wiring metal, and obtained in such a way that, while maintaining a shallow source/drain joint position, resistances of a source, a drain and a gate electrode may be reduced by the silicide layer containing NiSi, and moreover, a junction leak may be reduced.

SOLUTION: The semiconductor device is provided with a semiconductor substrate (100) having an element isolation domain, and a diffusion region (121a, 122a) formed in the semiconductor substrate, a gate electrode (200a) formed on the semiconductor substrate, and an F inclusion NiSi layer (501a, 502a) containing F atoms of 3.0×1013cm-2or more in area density formed on the diffusion region. An n-type MOSFET is provided such that a depth from the bonded surface formed of the diffusion region and the semiconductor substrate to an F inclusion NiSi layer underside may be within a range from 20 nm to 100 nm, and an F atomic concentration in the interface of the F inclusion NiSi layer and the semiconductor substrate may be 8.0×1018cm-3or higher.

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