发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a CMP apparatus and method which can estimate the occurrence of slip-out of a wafer during polishing and can detect the occurrence of chipping or cracking of the wafer during polishing. <P>SOLUTION: The CMP apparatus for polishing the wafer 7 comprises a platen 1 which has a polishing pad 5 on the surface and is rotated, and a wafer holding mechanism 8 which is rotated while holding the wafer 7 in such a manner as to press the wafer 7 against the polishing pad. The CMP apparatus is also equipped with a wafer outer shape detecting means 11 for detecting the outer shape of the wafer being polished, and an outer shape change calculating means 12 for calculating a change in detected outer shape of the wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259979(A) 申请公布日期 2005.09.22
申请号 JP20040069449 申请日期 2004.03.11
申请人 TOKYO SEIMITSU CO LTD 发明人 KINOSHITA OSAMU
分类号 B24B49/12;B24B37/04;B24B37/12;B24B37/20;B24B37/24;H01L21/304 主分类号 B24B49/12
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