| 摘要 |
PROBLEM TO BE SOLVED: To provide the solid-state imaging device whose aperture ratio is improved, by reducing the number of pulse wirings in a MOS type sensor incorporating a floating diffusion (FD) type amplifier in a pixel. SOLUTION: A read pulse for a read transistor 2 of a first pixel and a reset pulse for a reset transistor 3 of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line 16. The LOW level potential of a drain line 7, connected to a drain region (region for supplying a pulse voltage to a FD part via the reset transistor 3) of the first pixel, is set to a potential higher than the potential depth of a photodiode 1 of the first pixel, in resetting the second pixel. The potential below the gate, when applying a LOW level voltage to the gate of the reset transistor 3 of the first pixel, is set to a potential higher than the LOW level potential of the drain line 7. COPYRIGHT: (C)2005,JPO&NCIPI
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