| 摘要 |
The invention relates to a method for fabricating a trench transistor, in which there are formed, within an epitaxial layer ( 11, 11 ') deposited above a substrate ( 10 ) of a first conductivity type (n), a trench ( 14 ) and, within the trench ( 14 ), a gate dielectric ( 15 ) and a gate electrode ( 16 ) and, in a body region ( 20 ) of a second conductivity type (p) adjoining the trench ( 14 ) a source region ( 13 ) of the first conductivity type (n), a drift region ( 12 ) of the first conductivity type (n) forming a drain zone being formed at the end of the junction between the substrate ( 10 ) and the epitaxial layer ( 11, 11 ') by means of one or more high-energy implantations, the lower end (U) of the trench ( 14 ) projecting into said drift region ( 12 ), and to a trench transistor of this type formed as a low-voltage transistor.
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