MOS power transistor device, has vertical transistor structures with body zone that includes implantation body enhancement zone and having doping concentration greater than concentration of body zone and smaller than body-contact zone

摘要

The device has vertical transistor structures with a body zone (12) that includes an implantation body enhancement zone (19) at a base of trench gates. The doping concentration of the zone (19) is greater than the doping concentration of body zone and smaller than that of a body-contact zone. The implantation of the enhancement zone can be set, such that the lateral extension is proximal to channels in the area of the gates. An independent claim is also included for a method of manufacturing a MOS-power transistor device.