FILM-FORMING APPARATUS AND FIRM-FORMING METHOD THEREOF

摘要

Disclosed is a sputtering film-forming apparatus which is capable of forming a metal compound film with good characteristics at higher film-forming rate by a simple process at low cost. In a vacuum chamber (1), there are arranged a cylindrical rotary drum (4) which is rotated while holding a substrate (3) on the circumferential surface, sputtering means (6, 7) for performing a sputtering process on the substrate held by the rotary drum (4) when the drum is in the sputtering position, and a plasma irradiation means (12) for irradiating the substrate (3) with a reaction gas which has been transformed into a plasma when the rotary drum (4) is in the reaction position. A part of the inner surface of the vacuum chamber (1) facing a region (11) in which the reaction gas is transformed into a plasma by the plasma irradiation means (12) is covered with a dielectric body (15).