| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a top emit type nitride-based light emitting element and its manufacturing method. <P>SOLUTION: The top emit type nitride-based light emitting element has such a structure that a substrate, an n-type clad layer, an active layer, and a p-type clad layer are laminated in this order; a lattice cell layer and a surface protection layer are formed on the p-type clad layer; and a transparent conductive thin film layer made of a transparent conductive material is formed on the surface protection layer and the lattice cell layer. The lattice cell layer is such that cells, each formed of a material having a conductivity so that both electrical and optical properties can be improved and having a width of 30 μm or less, are formed in the lattice structure as separated from each other. The surface protection layer is so formed as to cover at least regions between the cells in order to protect the surface of the p-type clad layer. Due to this structure, an ohmic contact characteristic with the p-type clad layer is improved, resulting in showing a superior current-voltage characteristic as well as a high optical transparency and hence increasing the emission efficiency of the element. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
