SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve reliability in a semiconductor device in a chip size package-type and in a manufacturing method of the device. SOLUTION: A glass substrate 56 is bonded to a surface of a silicon wafer 51 where pad electrodes 53 are formed. Via holes VH reaching the pad electrodes 53 from a backside of the silicon wafer 51 are formed. Buffer layers 60 are formed and wiring layers 63 which extend to the backside of the silicon wafer 51 from the via holes VH and are connected to the pad electrodes 53 are formed. Reinforcement layers 64 are formed on the wiring layers 63 so that they are covered. A roughening processing is performed on the surfaces of the reinforcement layers 64 so that fine concaves and convexes are formed. Solder masks 65 are formed on the reinforcement layers 64 which are roughened, and openings K are arranged in a part of the reinforcement layers 64 and the solder masks 65. Solder balls 66 are formed in the openings K. The silicon wafer 51 is divided into individual silicon chips 51A by dicing. COPYRIGHT: (C)2005,JPO&NCIPI