| 摘要 |
PROBLEM TO BE SOLVED: To provide actuated MEMS devices and a driver circuit for controlling the MEMS device. SOLUTION: The driver circuit includes high-voltage, thin film transistors (HVTFT) formed on a base board, and each HVTFT includes a control gate electrode, a source electrode, and a drain electrode in which the source electrode is located a first distance apart from the control gate electrode. The drain electrode is separated from the control gate electrode so that the shortest distance between a part of the drain electrode and the control gate electrode is greater than the first distance and that the first breakdown voltage between the drain electrode and the source electrode is greater than the second breakdown voltage between the control gate electrode and the source electrode. The actuated MEMS devices are formed on the base board, each being connected with the drain electrode of associated one of the HVTFTs. COPYRIGHT: (C)2005,JPO&NCIPI
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