| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for an electron beam, an X-ray or EUV light improved in sensitivity, pattern collapse, pattern profile, line edge roughness and dissolution contrast, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition for the electron beam, the X-ray or EUV light contains (A) a compound which generates a sulfonic acid of a specified structure upon irradiation with an actinic ray or radiation and (B) a resin which has a repeating unit of a specified structure and is decomposed by the action of an acid to increase solubility in an alkaline developer. The pattern forming method uses the composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
