| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which improves performance in microfabrication of a semiconductor element using an electron beam, an X-ray or EUV light, and simultaneously satisfies high sensitivity, high resolution and good line edge roughness particularly when the resist composition is used in the form of an ultrathin film of ≤250 nm. <P>SOLUTION: The positive resist composition comprises (A) a phenolic polymer which is insoluble or slightly soluble in an alkaline developer and becomes soluble in an alkaline developer by the action of an acid; (B) a compound which generates an acid upon irradiation with an electron beam, an X-ray or EUV light; and (C) a solvent having a boiling point of ≥160°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
