| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a monolithic white light emitting device having a simple and new structure easy to be manufactured. <P>SOLUTION: In the light emitting device, a silicon or rare-earth metal forming a sub-band in an active layer is doped. An active layer 3 is composed of one or two layers, and when composed of two layers, a cladding layer is intervened between them. The structure of the light emitting device enables white semiconductor light to be emitted, and eliminates the need for a help by a fluorescent material. The monolithic white light emitting device is easy to be manufactured and inexpensive. Further, compared to an existing white light emitting device using the help of the fluorescent material, its application area is wide. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
