| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent malfunction of a memory cell due to leakage current. <P>SOLUTION: A semiconductor memory device has: a first bit line and a second bit line; the memory cell having 2 mutually complementary storage nodes, and being respectively connected with the first bit line and the second bit line through each selection transistor; a precharge circuit which charges the first bit line and the second bit line to a prescribed potential in advance of data reading; a holding circuit for holding the potential of the first bit line and the second bit line; a reading circuit connected to the first bit line; and a leakage circuit whose one terminal is connected to the second bit line and the other terminal of which is connected to the ground to leakage current from the second bit line. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
