| 摘要 |
Embodiments include treatment of substrates, formation of structures, and formation of multilayer structures using contact masks where a controlled mating of the contact masks and substrates is used. Some embodiments involve controlled mating at speeds equal to or less than 10 microns/second, more preferably equal to or less than 5 microns/second, and even more preferably equal to or less than 1 micron/second. Some embodiments involve controlled mating that uses a higher speed of approach when further away followed by a slower speed of approach to cause mating. Some embodiments involve controlled mating that uses a higher speed of approach when making preliminary contact, then backing away a desired distance, and then making a mating approach that causes mating while using a slower mating speed. |
