发明名称 |
Spacer approach for CMOS devices |
摘要 |
A semiconductor device having a graded source/drain region for use in CMOS devices is provided. The semiconductor device is formed by utilizing a spacer and a sacrificial spacer as masks. The sacrificial spacer is formed over an etch stop layer, which acts as an etch stop and protects underlying structures from becoming damaged during the etching process. In particular, the present invention may be used, for example, to protect the edge or corner of a shallow trench isolation from becoming damaged during etching.
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申请公布号 |
US2005208726(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20040804397 |
申请日期 |
2004.03.19 |
申请人 |
CHANG SUN-JAY;WU SHIEN-YANG |
发明人 |
CHANG SUN-JAY;WU SHIEN-YANG |
分类号 |
H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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