发明名称 HIGH POWER SEMICONDUCTOR LIGHT SOURCE
摘要 A semiconductor light source comprises superluminescent diodes (SLDs) disposed on a substrate having a facet, channels separating the SLDs, and a mode expander region. Each SLD has a diamond shaped active region such that the front and rear end of each SLD ends in a taper. The mode expander region is disposed on at least one side of the tapers of the SLDs and is tapered into a waveguide extending to said facet.
申请公布号 EP1121720(A4) 申请公布日期 2005.09.21
申请号 EP19990928706 申请日期 1999.06.16
申请人 TRUMPF PHOTONICS, INC. 发明人 ALPHONSE, GERRY, A.
分类号 G02B6/122;G02B6/30;H01L33/00;H01S5/026;H01S5/10;H01S5/14;H01S5/20;H01S5/40;H01S5/42;H01S5/50 主分类号 G02B6/122
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