发明名称 |
HIGH POWER SINGLE MODE SEMICONDUCTOR LASER |
摘要 |
A single-mode semiconductor diode laser includes a single-mode section, a tapered mode-transformer section coupled to the single-mode section, and a power-supply section coupled to the tapered mode transformer section. The power-supply section has a second width larger than the width of the single-mode section. The tapered mode-transformer section is characterized in that optical energy from said single-mode section adiabatically couples to the power-supply section through the mode-transformer section. |
申请公布号 |
EP1269588(A4) |
申请公布日期 |
2005.09.21 |
申请号 |
EP20010938970 |
申请日期 |
2001.01.19 |
申请人 |
TRUMPF PHOTONICS, INC. |
发明人 |
GARBUZOV, DIMITRI, Z.;KHALFIN, VIKTOR, B. |
分类号 |
H01S5/10;H01S5/20 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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