发明名称 HIGH POWER SINGLE MODE SEMICONDUCTOR LASER
摘要 A single-mode semiconductor diode laser includes a single-mode section, a tapered mode-transformer section coupled to the single-mode section, and a power-supply section coupled to the tapered mode transformer section. The power-supply section has a second width larger than the width of the single-mode section. The tapered mode-transformer section is characterized in that optical energy from said single-mode section adiabatically couples to the power-supply section through the mode-transformer section.
申请公布号 EP1269588(A4) 申请公布日期 2005.09.21
申请号 EP20010938970 申请日期 2001.01.19
申请人 TRUMPF PHOTONICS, INC. 发明人 GARBUZOV, DIMITRI, Z.;KHALFIN, VIKTOR, B.
分类号 H01S5/10;H01S5/20 主分类号 H01S5/10
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