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发明名称
RF POWER AMPLIFIER EMPLOYING BIAS CIRCUIT TOPOLOGIES FOR MINIMIZATION OF RF AMPLIFIER MEMORY EFFECTS
摘要
申请公布号
EP1576724(A2)
申请公布日期
2005.09.21
申请号
EP20030726376
申请日期
2003.04.22
申请人
POWERWAVE TECHNOLOGIES, INC.
发明人
KHANIFAR, AHMAD;MASLENNIKOV, NIKOLAI;SPILLER, GARETH
分类号
H03F1/30;H03F1/02;H03F1/32;H03F3/60;(IPC1-7):H03F1/00
主分类号
H03F1/30
代理机构
代理人
主权项
地址
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