| 摘要 |
PROBLEM TO BE SOLVED: To provide a technical means that constitutes a compound semiconductor element by utilizing a boron-containing IIIV compound semiconductor layer composed of a 110} crystal plane obtained stably over a wide temperature range. SOLUTION: The compound semiconductor element is manufactured by using the boron-containing 110} IIIV compound semiconductor layer composed of a 110} crystal layer formed on single-crystal silicon substrate having a surface composed of a 100} or 111} crystal plane and inclined at <=20 deg. by making the surface of the substrate a horizontal reference. |
