| 摘要 |
Random-access memory device having select lines, bit lines, and several RAM cells, each RAM cell being connected to a corresponding one of said select lines and to a corresponding one of said bit lines. The random-access memory device further having select buffers for selecting the read-out of one out of the selected lines when receiving a selection signal. Each of the select buffers having an inverter serving as driver. The inverter is being followed by a diode for limiting output voltage swings at the respective select line.
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