发明名称 |
Method for manufacturing semiconductor devices |
摘要 |
A method for manufacturing semiconductor devices is provided in which an organic adhesive layer is formed on the backside of a semiconductor wafer after being thinned by a backlapping process and cured to form a B-stage adhesive layer. Using the B-stage adhesive layer, the semiconductor device may then be attached to a circuit substrate and then subjected to additional curing to form a C-stage adhesive layer. Such semiconductor devices may also be attached directly to a lower semiconductor chip or, in the alternative, may be attached to a spacer mounted that is or will be mounted on a lower semiconductor chip or the circuit substrate. The organic adhesive is selected to counteract stresses induced by a passivation layer formed on the active surface, thereby reducing or preventing warping of the semiconductor wafer and eliminating the need for a separate resin paste adhesive during the chip attaching process. |
申请公布号 |
US6946328(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20040866662 |
申请日期 |
2004.06.15 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM PYOUNG-WAN;YOON TAE-SUNG;HWANG HYEON |
分类号 |
H01L21/52;H01L21/304;H01L21/44;H01L21/58;H01L21/68;H01L21/78;H01L21/98;H01L25/065;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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