发明名称 Method for manufacturing semiconductor devices
摘要 A method for manufacturing semiconductor devices is provided in which an organic adhesive layer is formed on the backside of a semiconductor wafer after being thinned by a backlapping process and cured to form a B-stage adhesive layer. Using the B-stage adhesive layer, the semiconductor device may then be attached to a circuit substrate and then subjected to additional curing to form a C-stage adhesive layer. Such semiconductor devices may also be attached directly to a lower semiconductor chip or, in the alternative, may be attached to a spacer mounted that is or will be mounted on a lower semiconductor chip or the circuit substrate. The organic adhesive is selected to counteract stresses induced by a passivation layer formed on the active surface, thereby reducing or preventing warping of the semiconductor wafer and eliminating the need for a separate resin paste adhesive during the chip attaching process.
申请公布号 US6946328(B2) 申请公布日期 2005.09.20
申请号 US20040866662 申请日期 2004.06.15
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 KIM PYOUNG-WAN;YOON TAE-SUNG;HWANG HYEON
分类号 H01L21/52;H01L21/304;H01L21/44;H01L21/58;H01L21/68;H01L21/78;H01L21/98;H01L25/065;(IPC1-7):H01L21/44 主分类号 H01L21/52
代理机构 代理人
主权项
地址