发明名称 Method for forming wiring structure which includes annealing conductive film before and after removal of a portion of the conductive film
摘要 A recess is formed in an insulating film, and then a conductive film is deposited over the insulating film so as to fill the recess. Thereafter, the conductive film is subjected to a first heat treatment. Subsequently, part of the conductive film located outside the recess is removed, and then the remaining part of the conductive film is subjected to a second heat treatment with the surface thereof exposed.
申请公布号 US6946383(B2) 申请公布日期 2005.09.20
申请号 US20030448095 申请日期 2003.05.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HARADA TAKESHI
分类号 H01L21/321;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/321
代理机构 代理人
主权项
地址