发明名称 |
Method for forming wiring structure which includes annealing conductive film before and after removal of a portion of the conductive film |
摘要 |
A recess is formed in an insulating film, and then a conductive film is deposited over the insulating film so as to fill the recess. Thereafter, the conductive film is subjected to a first heat treatment. Subsequently, part of the conductive film located outside the recess is removed, and then the remaining part of the conductive film is subjected to a second heat treatment with the surface thereof exposed.
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申请公布号 |
US6946383(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20030448095 |
申请日期 |
2003.05.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARADA TAKESHI |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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