| 发明名称 |
X-ray exposure apparatus, X-ray exposure method, X-ray mask, X-ray mirror, synchrotron radiation apparatus, synchrotron radiation method and semiconductor device |
| 摘要 |
An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.
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| 申请公布号 |
US6947518(B2) |
申请公布日期 |
2005.09.20 |
| 申请号 |
US20010769490 |
申请日期 |
2001.01.26 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ITOGA KENJI;KITAYAMA TOYOKI;WATANABE YUTAKA;UZAWA SHUNICHI |
| 分类号 |
G21K5/02;G03F7/20;G21K1/06;G21K1/10;G21K5/04;H05H13/04;(IPC1-7):G21K5/00 |
主分类号 |
G21K5/02 |
| 代理机构 |
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代理人 |
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