发明名称 |
Physical vapor deposition targets, and methods of fabricating metallic materials |
摘要 |
The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar <220> texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.
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申请公布号 |
US6946039(B1) |
申请公布日期 |
2005.09.20 |
申请号 |
US20000705101 |
申请日期 |
2000.11.02 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
SEGAL VLADIMIR M.;FERRASSE STEPHANE;ALFORD FRANK |
分类号 |
C22F1/04;C22C21/12;C22F1/00;C22F1/08;C23C14/34;H01L21/285;(IPC1-7):C22C11/00 |
主分类号 |
C22F1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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