发明名称 Physical vapor deposition targets, and methods of fabricating metallic materials
摘要 The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar <220> texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.
申请公布号 US6946039(B1) 申请公布日期 2005.09.20
申请号 US20000705101 申请日期 2000.11.02
申请人 HONEYWELL INTERNATIONAL INC. 发明人 SEGAL VLADIMIR M.;FERRASSE STEPHANE;ALFORD FRANK
分类号 C22F1/04;C22C21/12;C22F1/00;C22F1/08;C23C14/34;H01L21/285;(IPC1-7):C22C11/00 主分类号 C22F1/04
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