发明名称 |
Method of manufacturing III-V group compound semiconductor |
摘要 |
When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula In<SUB>x</SUB>Ga<SUB>y</SUB>Al<SUB>z</SUB>N (where 0<=x<=1, 0<=y<=1, 0<=z<=1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.
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申请公布号 |
US6946308(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20030396565 |
申请日期 |
2003.03.26 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
HIRAMATSU KAZUMASA;MIYAKE HIDETO;BOHYAMA SHINYA;MAEDA TAKAYOSHI;IYECHIKA YASUSHI |
分类号 |
C30B29/38;C30B25/02;H01L21/205;H01L29/201;H01L33/32;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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