| 发明名称 |
MRAM device having low-k inter-metal dielectric |
| 摘要 |
A magnetic random access memory (MRAM) device including a magnetic tunneling junction (MTJ) stack separated from one or more proximate conductive layers and/or one or more proximate MTJ stacks by a low-k dielectric material.
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| 申请公布号 |
US6946698(B1) |
申请公布日期 |
2005.09.20 |
| 申请号 |
US20040816730 |
申请日期 |
2004.04.02 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHUN-CHIEN |
| 分类号 |
G11C11/15;H01L21/8246;H01L27/22;H01L29/76;H01L31/119;H01L43/00;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
| 代理机构 |
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