发明名称 |
Process for making air gap containing semiconducting devices and resulting semiconducting device |
摘要 |
A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm<SUP>3</SUP>; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.
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申请公布号 |
US6946382(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20040505511 |
申请日期 |
2004.08.24 |
申请人 |
DOW GLOBAL TECHNOLOGIES INC. |
发明人 |
TOWNSEND, III PAUL H.;FOSTER KENNETH L. |
分类号 |
H01L23/522;H01L21/027;H01L21/311;H01L21/312;H01L21/316;H01L21/762;H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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