发明名称 High temperature coefficient MOS bias generation circuit
摘要 A high temperature coefficient includes a temperature dependent bias generation circuit serially coupled with a variable resistance. The resistance of the variable resistance device increases with increasing temperature such that the output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device.
申请公布号 US6946896(B2) 申请公布日期 2005.09.20
申请号 US20030447790 申请日期 2003.05.29
申请人 BROADCOM CORPORATION 发明人 BEHZAD ARYA REZA
分类号 G05F3/26;(IPC1-7):G05F1/10 主分类号 G05F3/26
代理机构 代理人
主权项
地址