发明名称 Deposited film forming apparatus and deposited film forming method
摘要 For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
申请公布号 US6946167(B2) 申请公布日期 2005.09.20
申请号 US20030691514 申请日期 2003.10.24
申请人 CANON KABUSHIKI KAISHA 发明人 HOSOI KAZUTO;SHIRASUNA TOSHIYASU;TAKADA KAZUHIKO;OKAMURA RYUJI;AKIYAMA KAZUYOSHI;MURAYAMA HITOSHI
分类号 G03G5/08;C23C16/50;C23C16/509;H01J37/32;H01L21/205;(IPC1-7):C23C16/00 主分类号 G03G5/08
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