| 摘要 |
In an electron beam lithography apparatus, when a plotting pattern is an isolated fine pattern, an exposure energy upon plotting lacks. In the prior art set forth above, dimension dependent exposure energy correction is performed as a measure, however, a problem is encountered in that excessive exposure is caused in regions where the exposure area ratio is high. The present invention solves the problem in the foregoing prior art and provides an electron beam lithography apparatus and a lithography method using an electron beam which achieves good plotting dimension accuracy even for a fine pattern plotting where regions having different exposure area ratios are present in an admixing manner. Additionally, the present invention has a construction to incorporate dimension dependent correction by taking a forward scattering diameter as a reference dimension to establish an effective backward scattering coefficient; to perform correction of an exposure energy using the effective backward scattering coefficient and an exposure area ratio.
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