发明名称 MRAM having SAL layer
摘要 A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.
申请公布号 US6947312(B2) 申请公布日期 2005.09.20
申请号 US20030606733 申请日期 2003.06.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAJIMA KENTARO
分类号 H01L27/10;G11C11/15;H01L21/8246;H01L27/105;H01L27/115;H01L43/08;(IPC1-7):G11C7/00 主分类号 H01L27/10
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