发明名称 |
Method of fabricating shallow trench isolation by ultra-thin SIMOX processing |
摘要 |
The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the trench. In the present invention, the isolation regions are formed by utilizing a selective ion implantation process that creates an oxygen implant region near the upper surface of the substrate. Upon a subsequent anneal step, the oxygen implant region is converted into an isolation region that has an upper surface that is substantially coplanar with the upper surface of the substrate.
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申请公布号 |
US6946358(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20030250053 |
申请日期 |
2003.05.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;HAKEY MARK C.;SEKIGUCHI AKIHISA |
分类号 |
H01L21/762;(IPC1-7):H01L21/76;H01L21/20;H01L21/31;H01L21/36 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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