METHOD OF CVD FOR FORMING SILICON NITRIDE FILM ON SUBSTRATE

摘要

A method of CVD for forming a silicon nitride film on substrate (W), comprising the step of accommodating substrate (W) in treating vessel (8) and heating the same to a treating temperature and the step of feeding a treating gas containing hexaethylaminodisilane gas and ammonia gas onto the substrate (W) heated to a treating temperature so as to deposit a silicon nitride film on the substrate (W).