| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus that can always keep a gas pressure nearly uniform in a chamber during the formation of thin film in case when the thin film is formed on an object to be processed while gases to be supplied into the chamber are changed. SOLUTION: The processor is provided with a process chamber 1 wherein an object to be processed is housed, supply pipes 3a-3c to supply a material gas into the process chamber, high-speed valves G-HSV 9a-9c provided to the gas supply pipe; a gas discharge pipe 10 to discharge a gas in the process chamber; a throttle valve 11 provided to the gas discharge pipe; bypass pipes 12a-12c to connect the upstream of the G-HSV of the gas supply pipe and the gas discharge pipe; high-speed valves B-HSV 13a-13c provided to the bypass pipe; and a controller 14 that controls opening/closing of the G-HSV, blocks the G-HSV when the G-HSV is open, and opens the B-HSV when the G-HSV is closed. The G-HSV and the B-HSV open and close at equivalent reaction speed when they are given an instruction by the controller. COPYRIGHT: (C)2005,JPO&NCIPI
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