发明名称 |
Copper-based metal polishing solution and method for manufacturing semiconductor device |
摘要 |
Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one acid selected from aminoacetic acid and aminosulfuric acid, an oxidizer, and water.
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申请公布号 |
US2005199589(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050109648 |
申请日期 |
2005.04.20 |
申请人 |
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发明人 |
HIRABAYASHI HIDEAKI;HIGUCHI MASATOSHI |
分类号 |
C09G1/02;C23F3/06;H01L21/321;(IPC1-7):B24D3/02;C23F1/00;B44C1/22;C09K3/14;C03C15/00 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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