发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
A semiconductor device comprising: a semiconductor layer formed on a dielectric; a gate electrode formed on the semiconductor layer; a compound metal layer disposed on a source side in a manner to contact a body region of the semiconductor layer; and an impurity diffusion layer disposed on a drain side in a manner to contact the body region of the semiconductor layer.
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申请公布号 |
US2005199965(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050079258 |
申请日期 |
2005.03.14 |
申请人 |
KATO JURI;TAKIZAWA TERUO |
发明人 |
KATO JURI;TAKIZAWA TERUO |
分类号 |
H01L29/872;H01L21/336;H01L21/8238;H01L29/47;H01L29/76;H01L29/786;(IPC1-7):H01L29/76;H01L21/823 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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