发明名称 |
Dynamic random access memory cell and method for fabricating the same |
摘要 |
A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench; forming a conducting layer inside the trench; forming a second capacitor dielectric layer on the surface of the substrate and on the conducting layer, wherein the substrate around the first and second capacitor dielectric layers serves as a bottom electrode; forming a protruding electrode on the substrate, the protruding electrode being on the substrate around the trench and covering a junction between the trench and the substrate; and electrically connecting the protruding electrode and the conducting layer, the conducting layer and the protruding electrode being an upper electrode.
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申请公布号 |
US2005202628(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050122655 |
申请日期 |
2005.05.04 |
申请人 |
LIN YUNG-CHANG;LIANG CHIA-WEN;WANG CHUAN-FU |
发明人 |
LIN YUNG-CHANG;LIANG CHIA-WEN;WANG CHUAN-FU |
分类号 |
H01L21/336;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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