| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a semiconductor device which is capable of preventing reduction in reliability, and which can be manufactured at a cost lower than the conventional types, and to realize a method for manufacturing the same. <P>SOLUTION: An electrode pad 2 is provided, electrically connected to an electric circuit formed on the device forming surface of a silicon wafer 4. A rewired wiring pattern 5 is provided that is electrically connected to the electrode pad 2. An oxide film 10 is formed on the surface of the wiring pattern 5 by the oxidation of the wiring pattern 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
